报告人： Dr. Lei Lu
报告时间：2017年10月13日（周五） 下午 14:30
报告地点：博习楼327会议室
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报告摘要：Due to higher transparency,low off-current and higher field-effect mobility, metal-oxide (MO) thin-filmtransistor (TFT) is hotly pursued for replacing Si-based TFT in futurehigh-resolution displays, for example virtual reality (VR). Incorporated withthe annealing-induced source/drain (S/D), a novel MO TFT, dubbed elevated-metal metal-oxide (EMMO) TFT wasproposed to provide high performance metrics while retain a small device sizefor high-resolution displays, which could not be combined in conventional MOTFT architectures. The “defect-populated” S/D and “defect-free” channel enabledthe high performance metrics: a competitive field-effect mobility of ~14 cm2/Vs;an extremely low off-current of ~10-18 A; an impressive on/off ratioof ~1012; and the superior reliability against temperature, bias andcurrent stresses.
报告人简介：
Dr. Lei Lureceived the BS and MS in Microelectronics from Soochow University in 2007 and2010 respectively, and then the PhD in Electronic and Computer Engineering(ECE) from Hong Kong University of Science and Technology (HKUST) in 2014. Dr.Lu was appointed as a Research Associate in the Dept. of ECE of HKUST from2014, and then joined the HKUST Jockey Club Institute for Advanced Study (IAS)as a Postdoctoral Fellow in 2016. Currently, he is a Research AssistantProfessor in the Dept. of ECE and is concurrently appointed as the IAS JuniorFellow. Dr. Lu is also with the “State Key Laboratory on Advanced Displays andOptoelectronics Technologies (SKL)” and working with Profs. Hoi-Sin Kwok andMan Wong on the various research areas, including the metal-oxide (MO)semiconductor materials, novel thin-film transistors (TFTs), advanced displaysand Microelectromechanical system (MEMS) transducers. These research outputs have been published in top electronicjournals, such as IEEE TED, EDL and APL and drew attention on the world’s topdisplay, transducer and electronic device meetings, such as SID display week16, Transducer 17 and IEDM 16.